Physical Science International Journal, ISSN: 2348-0130,Vol.: 7, Issue.: 1
Effect of Gamma Radiation in Undoped SnO2 Thin Films
A. F. Maged1*, L. A. Nada1 and M. Amin2 1Department of Solid State and Electron Accelerator, National Center for Radiation Research and Technology, (NCRRT), Atomic Energy Authority, P.O.Box 8029, Nasr City, Cairo, Egypt.
2Department of Physics, Faculty of Science, Cairo University, Giza, Egypt.
A. F. Maged1*, L. A. Nada1 and M. Amin2
1Department of Solid State and Electron Accelerator, National Center for Radiation Research and Technology, (NCRRT), Atomic Energy Authority, P.O.Box 8029, Nasr City, Cairo, Egypt.
(1) Yalin Lu, Department of Physics, US Air Force Academy, USA.
(2) Preeti Singh, Department of Physics, DIT, Greater Noida (U.P.), India.
(3) Abbas Mohammed, Blekinge Institute of Technology, Sweden.
(1) Mohsen Ahmadipour, School of Materials and Mineral Resources Engineering, University of Sains Malaysia, Malaysia.
(2) Anonymous, Turkey.
(3) Anonymous, Taiwan.
(4) Anonymous, Malaysia.
Complete Peer review History: http://www.sciencedomain.org/review-history/9134
This paper was reported on study the effect of gamma radiation on nanoporous SnO2 electrodes for dye-sensitized solar cells. Structural, optical and electrical properties were studied. The refractive index was decreased with the increase in gamma radiation. The resistivity of thin films was decreased about 40% with the increase of gamma radiation at 659 nm film thicknesses. The mobility and carrier concentration were increased with the increase of gamma dose at 659 nm film thickness.
SnO2; semiconductors; thin film; radiation.
Full Article - PDF Page 20-27
DOI : 10.9734/PSIJ/2015/17250Review History Comments