Physical Science International Journal, ISSN: 2348-0130,Vol.: 7, Issue.: 1

Original-research-article

Effect of Gamma Radiation in Undoped SnO₂ Thin Films

A. F. Maged^1*, L. A. Nada¹ and M. Amin²

Article Information
Editor(s):
(1) Yalin Lu, Department of Physics, US Air Force Academy, USA.
(2) Preeti Singh, Department of Physics, DIT, Greater Noida (U.P.), India.
(3) Abbas Mohammed, Blekinge Institute of Technology, Sweden.
Reviewers:
(1) Mohsen Ahmadipour, School of Materials and Mineral Resources Engineering, University of Sains Malaysia, Malaysia.
(2) Anonymous, Turkey.
(3) Anonymous, Taiwan.
(4) Anonymous, Malaysia.
Complete Peer review History: http://www.sciencedomain.org/review-history/9134

This paper was reported on study the effect of gamma radiation on nanoporous SnO₂ electrodes for dye-sensitized solar cells. Structural, optical and electrical properties were studied. The refractive index was decreased with the increase in gamma radiation. The resistivity of thin films was decreased about 40% with the increase of gamma radiation at 659 nm film thicknesses. The mobility and carrier concentration were increased with the increase of gamma dose at 659 nm film thickness.

Keywords :

SnO₂; semiconductors; thin film; radiation.

Full Article - PDF    Page 20-27

DOI : 10.9734/PSIJ/2015/17250