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International Research Journal of Pure and Applied Chemistry, ISSN: 2231-3443,Vol.: 16, Issue.: 4

Original-research-article

M-Polynomial and Degree Based Topological Indices for Silicon Oxide

 

P. J. N. Thayamathy1, P. Elango1* and M. Koneswaran2

1Department of Mathematics, Faculty of Science, Eastern University, Sri Lanka.

2Department of Chemistry, Faculty of Science, Eastern University, Sri Lanka.

Article Information

Editor(s):

(1) Dr. Wolfgang Linert, Professor, Institute of Applied Synthetic Chemistry, Vienna University of Technology Getreidemarkt, Austria.

Reviewers:

(1) Rachanna Kanabur, BLDE Association's Commerce, BHS Arts & TGP Science College, India.

(2) Nazeer Muhammad, COMSATS Institute of Information Technology, Pakistan.

(3) Donald H. Galvan, Universidad Nacional Autonoma de Mexico.

(4) Fatma Kandemirli, Kastamonu University, Turkey.

Complete Peer review History: http://www.sciencedomain.org/review-history/25449

Abstracts

Silican oxide (SiO2) is the most abundant oxide present on the surface of the earth which has a wide spectrum of technological applications due to it's various chemical and physical properties. The topological index is a numerical representation of a molecular structure. The first topological index in chemical graph theory is the Winer index which is a distance-based topological index. The degree-based topological indices are the most studied type of topological indices which play a prominent role in chemical graph theory. In this paper, we derive the M-Polynomial for Silican oxide SiO2 layer structure and calculate some of the important degree based topological indices using this M-polynomial. We derive the M-Polynomial derivative formula for the ABC-index and calculate the ABC-index by using this derived formula.

Keywords :

M-polynomials; chemical graph theory; silicon oxide; topological index.

Full Article - PDF    Page 1-9

DOI : 10.9734/IRJPAC/2018/42645

Review History    Comments

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