Asian Journal of Research and Reviews in Physics, ..,Vol.: 1, Issue.: 2
Electronic Behaviour of Schottky Diodes Fabricated from Electroplated CdSe Semiconductors
O. I. Olusola1*, T. Ewetumo1, T. A. Obagade1 and K. D. Adedayo1 1Department of Physics, School of Science, The Federal University of Technology, Akure (FUTA), Ondo State, P.M.B. 704, Nigeria.
O. I. Olusola1*, T. Ewetumo1, T. A. Obagade1 and K. D. Adedayo1
1Department of Physics, School of Science, The Federal University of Technology, Akure (FUTA), Ondo State, P.M.B. 704, Nigeria.
(1) Khalil Kassmi, Professor, Department of Physics, Mohamed Premier University, Morocco.
(1) Subramaniam Jahanadan, Labuan Matriculation College, Malaysia.
(2) S. B. Ota, Institute of Physics, India.
(3) Der Yuh Lin, National Changhua University of Education, Taiwan.
(4) Abdelkader Djelloul, Algeria.
Complete Peer review History: http://www.sciencedomain.org/review-history/25241
The fabrication of Schottky diodes using electroplated n- type CdSe thin films and gold metal contact have been successfully achieved. The electronic properties of the fabricated diodes with the device structure glass/FTO/n-CdSe/Au have been investigated by current-voltage (I-V) and capacitance-voltage (CV) measurement techniques. The I-V characteristics revealed a good rectifying behaviour with an ideality factor of 1.50, a potential barrier height (ϕb) >0.79 eV and rectification factor (RF) surpassing 102 at 1.0 V. Results from the C-V measurement showed that the fabricated Schottky diodes have doping density of ~1.61 × 1017 cm-3 and a built-in potential (Vbi) of 0.24 V which falls in the range of reported Vbi values for Schottky diodes. Both I-V and C-V parameters revealed that the CdSe Schottky diodes possess qualities for excellent performance in electronics circuit or as an electronic device.
Electroplating; n-CdSe layers; Schottky diodes; rectification; built-in potential.
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